PART |
Description |
Maker |
MB84VD23481FJ-70PBS |
64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAM
|
SPANSION
|
MB84VD23381HJ-70PBS |
64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM 64M (X16) FLASH MEMORY & 16M (X16) Mobile FCRAM
|
Spansion Inc. SPANSION LLC
|
MB81P643287 |
MEMORY CMOS 8 x 256K x 32 BIT, FCRAM CORE BASED DOUBLE DATA RATE SDRAM
|
Fujitsu Microelectronics
|
MB82DBS02163C-70L MB82DBS02163C-70 |
Mobile FCRAM
|
Fujitsu
|
MB82DBS02154E-70L |
32 Mbit Mobile FCRAM 1.8 V, Burst Mode, Multiplexed Address and Data Bus
|
Fujitsu Component Limited. Fujitsu Media Devices Limited
|
M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位(8388608字由16位)的CMOS闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
MB84VD22398EJ-90 MB84VD22398EJ-85 MB84VD2239XEJ-85 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM 2-Stacked MCP
|
SPANSION[SPANSION] Fujitsu
|
TC59LM814CFT-60 TC59LM806CFT-60 TC59LM806CFT-50 TC |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM 4,194,304-WORDSx4 BANKSx16-BITS Network FCRAM or 8,388,608-WORDSx4BANKSx8-BITS Network FCRAM
|
Toshiba Corporation
|
AM49PDL129AH70IT AM49PDL129AH61IT AM49PDL129AH61IS |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) CMOS Pseudo Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion, Inc.
|
MB82DP02183C-65L MB82DP02183C-65LPBT MB82DP02183C- |
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, UUC 32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, PBGA71 32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu, Ltd. Fujitsu Component Limited.
|
A29L008UV-90 A29L008TV-90U A29L008TV-90 A29L008TV- |
90ns; active read:9mA; programm/erase:20mA 0.2uA 1M x 8bit CMOS 3.0V-only boot sector flash memory 1M X 8 Bit CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory From old datasheet system
|
AMICC[AMIC Technology]
|
HY5S5B6GLF-6 HY5S5B6GLF-6E HY5S5B6GLF-H HY5S5B6GLF |
256Mbit (16Mx16bit) Mobile SDR Memory
|
Hynix Semiconductor
|